The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT
نویسندگان
چکیده
منابع مشابه
Polarity Dependent Reliability of Advanced MOSFET Using MOCVD Nitrided Hf-silicate High-k Gate Dielectric
We report reliability of MOSFETs with MOCVD nitrided Hfsilicate (HfSiON) high-k gate dielectric. HfSiON has shown superior electrical characteristics, such as low leakage relative to SiO2 and high mobility compared to other high-k gate dielectrics [1]. SILC is found to be comparable to SiO2 and better than Hf-silicate without nitridation. TDDB and BTI reveal significant difference between inver...
متن کاملImpact of Gate Process Technology on EOT of HfO2 Gate Dielectric
To facilitate CMOS scaling beyond the 65 nm technology node, high-permittivity gate dielectrics such as HfO2 will be needed in order to achieve sub-1.3nm equivalent oxide thickness (EOT) with suitably low gate leakage, particularly for low-power applications. Polycrystalline silicongermanium (poly-SiGe) is a promising gate material because it is compatible with a conventional CMOS process flow,...
متن کاملVolatile Guanidinato-based Metalorganic Precursors for Ald Process
Film properties of TaN-based metal (TaCN and TaSiN) have been precisely controlled for plasma enhanced ALD (PEALD) and thermal ALD with additives of N2 or NH3. Film resistivity (ρ) strongly depended on the nitrogen concentration of TaN-based metal. These films showed conformal step-coverage for high-aspect (>6) 50nm-wide trenches. Consequently, ALD TaN-based metal is promising for microelectron...
متن کاملThe impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET
The impact of interface/border defect on performance and reliability was investigated for gate-first and gate-last high-k/metal-gate CMOSFET. For high-k/metal-gate CMOSFET, VFB roll-off is critical as effective oxide thickness (EOT) scales below 15 angstrom (Å) especially for metal gate-first device with an extra capping layer to adjust VTH. By proposing a model of metal-gate process induced in...
متن کاملGate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature
Ultra-low effective oxide thickness (EOT) Ge MOS devices with different HfON/HfAlO stacks and sintering temperatures were investigated in this work. Both the reduced gate leakage current and reliability improvement can be achieved by either a suitable gate dielectric stack or sintering temperature. As a whole, a 0.5 nm thick HfAlO in gate dielectric stack and a sintering temperature at 350 C ar...
متن کامل